RS1FJ-M3/H
Vishay General Semiconductor - Diodes Division
Deutsch
Artikelnummer: | RS1FJ-M3/H |
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Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
Teil der Beschreibung.: | DIODE GEN PURP 600V 1A DO219AB |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.39 |
10+ | $0.316 |
100+ | $0.1673 |
500+ | $0.1101 |
1000+ | $0.0749 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.25 V @ 1 A |
Spannung - Sperr (Vr) (max) | 600 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-219AB (SMF) |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 500 ns |
Produkteigenschaften | Eigenschaften |
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Verpackung / Gehäuse | DO-219AB |
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 5pF @ 4V, 1MHz |
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2025/02/11
2024/01/31
2024/05/23
2024/06/3
RS1FJ-M3/HVishay General Semiconductor - Diodes Division |
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Zielpreis (USD)
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